Stock Price
68.84
Daily Change
-1.53 -2.17%
Monthly
-4.76%
Yearly
0%
Q1 Forecast
63.87



Peers Price Chg Day Year Date
Analog Devices 355.67 1.32 0.37% 54.60% Feb/27
Ambarella 60.33 -10.57 -14.91% -1.79% Feb/27
Alpha And Omega Semiconductor 21.01 -0.93 -4.24% -30.61% Feb/27
Broadcom 319.62 -2.08 -0.65% 60.27% Feb/27
CEVA 20.86 -0.74 -3.43% -39.11% Feb/27
Kopin 2.22 -0.11 -4.53% 60.51% Feb/27
Lattice Semiconductor 95.62 -1.63 -1.68% 53.38% Feb/27
MACOM Technology Solutions 247.88 0.77 0.31% 114.32% Feb/27
MaxLinear 17.43 -0.49 -2.73% 19.30% Feb/27
Nve Nvec 68.84 -1.53 -2.17% 0% Feb/27

Indexes Price Day Year Date
USND 22668 -210.17 -0.92% 20.27% Feb/27
US2000 2632 -45.53 -1.70% 21.67% Feb/27

Nve Nvec traded at $68.84 this Friday February 27th, decreasing $1.53 or 2.17 percent since the previous trading session. Looking back, over the last four weeks, Nve Nvec lost 4.76 percent. Over the last 12 months, its price fell by 0 percent. Looking ahead, we forecast Nve Nvec to be priced at 63.87 by the end of this quarter and at 58.11 in one year, according to Trading Economics global macro models projections and analysts expectations.

NVE Corporation develops and sells devices that use spintronics, which is a nanotechnology that relies on electron spin to acquire, store, and transmit information. The Company manufactures spintronic products, including sensors and couplers that are used to acquire and transmit data. The Company has also licensed its spintronic magnetoresistive random access memory technology (MRAM). Its parts are found Industrial, scientific, and medical applications, as well as the Industrial Internet of Things. The Company's products include sensor, coupler, and MRAM product. Its sensor products detect the strength or gradient of magnetic fields and are often used to determine position or speed. Its spintronic couplers combine a giant magnetoresistance (GMR) sensor element and a microscopic coil. MRAM uses spintronics to store data. It combines the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM) and the nonvolatility of flash memory.